Display device

ABSTRACT

A display device, including a thin film transistor, a transfer pad, and a pixel electrode, is provided. The thin film transistor includes a drain. The transfer pad is electrically connected to the drain. The pixel electrode is electrically connected to the transfer pad through a first opening of a first insulating layer. The first insulating layer is disposed between the transfer pad and the pixel electrode. A width of the first opening is greater than a width of the drain. The width of the first opening is smaller than a width of the transfer pad. The display device of the disclosure can improve the electron transfer between the pixel electrode and the drain.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefits of U.S. provisionalapplication Ser. No. 62/933,986, filed on Nov. 12, 2019, U.S.provisional application Ser. No. 62/933,987, filed on Nov. 12, 2019, andChina application serial no. 202010830552.0, filed on Aug. 18, 2020. Theentirety of each of the above-mentioned patent applications is herebyincorporated by reference herein and made a part of this specification.

BACKGROUND Technical Field

The disclosure relates to an electronic device, and more particularly toa display device that can improve the electron transfer between thepixel electrode and the drain.

Description of Related Art

Flat display panels have been widely applied in electronic equipmentsuch as mobile phones, televisions, monitors, tablet computers, cardisplays, wearable devices, and desktop computers. With the vigorousdevelopment of electronic products, the requirements for the displayquality of the electronic products are getting higher and higher, sothat the electronic devices for display are continuously improvingtowards larger or higher resolution display effects.

SUMMARY

The disclosure provides a display device, which can improve the electrontransfer between the pixel electrode and the drain.

According to an embodiment of the disclosure, the display deviceincludes a thin film transistor, a transfer pad, and a pixel electrode.The thin film transistor includes a drain. The transfer pad iselectrically connected to the drain. The pixel electrode is electricallyconnected to the transfer pad through a first opening of a firstinsulating layer. The first insulating layer is disposed between thetransfer pad and the pixel electrode. The width of the first opening isgreater than the width of the drain. The width of the first opening issmaller than the width of the transfer pad.

Based on the foregoing, in the display device according to theembodiments of the disclosure, the pixel electrode may be electricallyconnected to the transfer pad through the first opening of the firstinsulating layer, and the transfer pad may be electrically connected tothe drain. Since the width of the first opening is greater than thewidth of the drain, and the width of the first opening is smaller thanthe width of the transfer pad, the contact area between the pixelelectrode and the transfer pad may be increased. In this way, thedisplay device of the embodiments can improve the electron transferbetween the pixel electrode and the drain by the configuration of thetransfer pad to reduce the resistance between the pixel electrode andthe drain, and improve the display quality of the display device.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawings are included for further understanding of the disclosure.The drawings are incorporated into the specification and constitute apart of the specification. The drawings illustrate the embodiments ofthe disclosure, and are used to explain the principles of the disclosuretogether with the descriptions.

FIG. 1A is a schematic top view of a display device according to anembodiment of the disclosure.

FIG. 1B is a schematic cross-sectional view of the display device ofFIG. 1A along a section line A-A′.

FIG. 1C is a schematic cross-sectional view of the display device ofFIG. 1A along a section line B-B′.

FIG. 2 is a schematic top view of a display device according to anotherembodiment of the disclosure.

DETAILED DESCRIPTION OF DISCLOSED EMBODIMENTS

This disclosure may be understood by referring to the following detaileddescriptions in conjunction with the drawings. It should be noted thatfor the readers to easily understand and for the simplicity of thedrawings, the multiple drawings in the disclosure only depict a part ofan electronic device, and the specific elements in the drawings are notdrawn according to actual scale. In addition, the number and size ofeach element in the drawings are only for illustration, and are notintended to limit the scope of the disclosure.

In the following specification and claims, words such as “comprising”,“containing” and “including” are open-ended words, which should beinterpreted as having the meaning of “containing but not limited to . .. ”.

It should be understood that when an element or a film layer is referredto as being “on” or “connected to” another element or film layer, theformer may be directly on the other element or film layer or directlyconnected to the other element or film layer, or there may be an elementor a film layer inserted between the two (indirect case). Conversely,when an element is referred to as being “directly on” or “directlyconnected to” another element or film layer, there is no element or filmlayer inserted between the two.

Although the terms first, second, third . . . may be used to describevarious constituent elements, the constituent elements are not limitedthereto. The terms are only used to distinguish a single constituentelement from other constituent elements in the specification. The sameterms may not be used in the claims, but replaced with first, second,third . . . according to the order declared by the elements in theclaims. Therefore, in the following specification, the first componentmay be the second component in the claims.

In some embodiments of the disclosure, terms such as “connection” and“interconnection” regarding bonding and connection, unless specificallydefined, may mean that two structures are in direct contact, or that twostructures are not in direct contact and there is another structuredisposed between the two structures. Moreover, the terms regardingbonding and connection may also include the cases where two structuresare movable or two structures are fixed. In addition, the term “coupled”includes any direct and indirect electrical connection means.

In the disclosure, the length and the width may be measured by adoptingan optical microscope, and the thickness may be measured by across-sectional image in an electron microscope, but not limitedthereto. In addition, there may be a certain error in any two values ordirections for comparison.

The electronic device of the disclosure may include a display device, anantenna device, a sensing device, a touch display, a curved display, ora free shape display, but not limited thereto. The electronic device maybe a bendable or a flexible electronic device. The electronic device mayinclude, for example, a light-emitting diode (LED), liquid crystal,fluorescence, phosphor, quantum dot (QD), other suitable display media,or a combination of the foregoing, but not limited thereto. The LED mayinclude, for example, an organic LED (OLED), an inorganic LED, a miniLED, a micro LED, a QDLED (or QLED), other suitable materials, or anycombination of the foregoing, but not limited thereto. The displaydevice may include, for example, a tiled display device, but is notlimited thereto. The antenna device may be, for example, a liquidcrystal antenna, but not limited thereto. The antenna device mayinclude, for example, an antenna tiled device, but not limited thereto.It should be noted that the electronic device may be any combination ofthe foregoing, but not limited thereto. In addition, the appearance ofthe electronic device may be rectangular, circular, polygonal, a shapewith curved edges, or other suitable shapes. The electronic device mayhave peripheral systems such as a driving system, a control system, alight source system, and a shelving system to support the displaydevice, the antenna device, or the tiled device. Hereinafter, thedisplay device will be used to illustrate the content of the disclosure,but the disclosure is not limited thereto.

It should be understood that, without departing from the spirit of thedisclosure, the features in several different embodiments may bereplaced, recombined, and mixed to complete other embodiments in thefollowing embodiments. The features between the embodiments may be mixedand matched arbitrarily as long as the features do not violate thespirit of the invention or are not conflicting.

References will now be made in detail to the exemplary embodiments ofthe disclosure, and examples of the exemplary embodiments areillustrated in the drawings. Whenever possible, the same referencenumerals are used to indicate the same or similar parts in the drawingsand the descriptions.

FIG. 1A is a schematic top view of a display device according to anembodiment of the disclosure. FIG. 1B is a schematic cross-sectionalview of the display device of FIG. 1A along a section line A-A′. FIG. 1Cis a schematic cross-sectional view of the display device of FIG. 1Aalong a section line B-B′. For clarity of the drawings and ease ofdescription, FIG. 1A omits several elements in the display device.

Please refer to FIG. 1A, FIG. 1B, and FIG. 1C at the same time. Adisplay device 100 of the embodiment includes a thin film transistor110, a transfer pad 120, and a pixel electrode 130. The thin filmtransistor 110, the transfer pad 120, and the pixel electrode 130 areall disposed on a substrate 140 of the display device 100. In theembodiment, the substrate 140 may include a rigid substrate, a flexiblesubstrate, or a combination of the foregoing. For example, the materialof the substrate 140 may include glass, quartz, sapphire, ceramics,polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET),other suitable substrate materials, or a combination of the foregoing,but not limited thereto.

In the embodiment, the thin film transistor 110 includes a gate GE, apart of a gate insulating layer GI, a source SD1, a drain SD2, and asemiconductor layer SE, but not limited thereto. The gate insulatinglayer GI may have openings GIa and GIb to expose a part of thesemiconductor layer SE. In the embodiment, the material of the sourceSD1 and/or the drain SD2 may include transparent conductive materials ornon-transparent conductive materials, such as indium tin oxide, indiumzinc oxide, indium oxide, zinc oxide, tin oxide, metal materials (suchas aluminum, molybdenum, copper, silver, etc.), other suitablematerials, or a combination of the foregoing, but not limited thereto.The material of the semiconductor layer SE may include amorphoussilicon, low-temperature polysilicon (LTPS), metal oxide (such as indiumgallium zinc oxide (IGZO)), other suitable materials, or a combinationof the foregoing, but not limited thereto. In other embodiments,different thin film transistors may include semiconductor layers ofdifferent materials, but not limited thereto.

In the schematic top view of the display device 100 of the embodiment(as shown in FIG. 1A), the display device 100 further includes a scanline SL and a data line DL. The scan line SL and the data line DL aredisposed on the substrate 140. The scan line SL extends along adirection X, the data line DL extends along a direction Y, and thedirection X is different from the direction Y. Since the source SD1 ofthe thin film transistor 110 may be electrically connected to the dataline DL, and the gate GE of the thin film transistor 110 may beelectrically connected to the scan line SL, the thin film transistor 110may be electrically connected to the data line DL and the scan line SL.

Please refer to FIG. 1A, FIG. 1B and FIG. 1C at the same time again. Inthe embodiment, the display device 100 further includes a firstinsulating layer 150 having a first opening 151, a second insulatinglayer 160 having a second opening 161, a buffer layer 170, a shieldinglayer 171, an insulating layer 172, a dielectric layer 173, aninsulating layer 174, and a common electrode 180. The first insulatinglayer 150, the second insulating layer 160, the buffer layer 170, theinsulating layer 172, the dielectric layer 173, and the insulating layer174 may be single-layer or multi-layer structures, and may include, forexample, organic materials, inorganic materials, or a combination of theforegoing, but not limited thereto. In the embodiment, the material ofthe shielding layer 171 may be, for example, a metal material or otherlight shielding materials. In some embodiments, the display device 100may not be disposed with a shielding layer (not shown).

In the embodiment, the buffer layer 170 and the shielding layer 171 areboth disposed between the thin film transistor 110 and the substrate140, and the shielding layer 171 is disposed corresponding to a channelCH of the gate GE in the semiconductor layer SE. The insulating layer172 is disposed between the gate GE and the gate insulating layer GI,and the insulating layer 172 is disposed corresponding to the gate GE.The dielectric layer 173 is disposed between the second insulating layer160 and the gate insulating layer GI to cover the gate GE and the gateinsulating layer GI. The dielectric layer 173 may have openings 173 aand 173 b. The opening 173 a is communicated with the opening GIa toexpose a part of the semiconductor layer SE, and the opening 173 b iscommunicated with the opening GIb to expose a part of the semiconductorlayer SE.

In the embodiment, the source SD1 and the drain SD2 are respectivelydisposed on the dielectric layer 173. The source SD1 may also bedisposed within the opening 173 a of the dielectric layer 173 and theopening GIa of the gate insulating layer GI, so that the source SD1 maybe electrically connected to the semiconductor layer SE through theopening 173 a and the opening GIa. The drain SD2 may also be disposedwithin the opening 173 b of the dielectric layer 173 and the opening GIbof the gate insulating layer GI, so that the drain SD2 may beelectrically connected to the semiconductor layer SE through the opening173 b and the opening GIb.

In the embodiment, the second insulating layer 160 is disposed betweenthe transfer pad 120 and the drain SD2. Specifically, the secondinsulating layer 160 is disposed on the thin film transistor 110. Thesecond insulating layer 160 covers the source SD1, the drain SD2, andthe dielectric layer 173. The second insulating layer 160 and thesubstrate 140 are respectively disposed on opposite sides of the thinfilm transistor 110. The second insulating layer 160 has a secondopening 161, and the second opening 161 exposes a part of the drain SD2.

In the embodiment, the transfer pad 120 may be electrically connected tothe drain SD2. Specifically, the transfer pad 120 is disposed on thesecond insulating layer 160 and is located between the pixel electrode130 and the drain SD2. The transfer pad 120 may also be disposed withinthe second opening 161 of the second insulating layer 160, so that thetransfer pad 120 may be electrically connected to the drain SD2 throughthe second opening 161 of the second insulating layer 160. In someembodiments, the transfer pad 120 may be disposed corresponding to thedrain SD2. The orthographic projection of the transfer pad 120 on thesubstrate 140 may overlap with the orthographic projection of the drainSD2 on the substrate 140, and the orthographic projection of thetransfer pad 120 on the substrate 140 may be greater than theorthographic projection of the drain SD2 on the substrate 140. In thetop view of the display device 100 (as shown in FIG. 1A), the area ofthe transfer pad 120 may be greater than the area of the drain SD2. Inthe embodiment, the transfer pad 120 is made of a metal material, andthe metal material may include molybdenum (Mo), aluminum (Al), titanium(Ti), copper (Cu), other suitable metals, or an alloy or a combinationof the foregoing materials, but not limited thereto. In someembodiments, the material of the transfer pad 120 may also include atransparent conductive material, such as indium tin oxide or indium zincoxide, but not limited thereto.

In the embodiment, the first insulating layer 150 is disposed betweenthe transfer pad 120 and the pixel electrode 130. Specifically, thefirst insulating layer 150 is disposed on the transfer pad 120, and thefirst insulating layer 150 covers the transfer pad 120 and the secondinsulating layer 160. The first insulating layer 150 and the thin filmtransistor 110 are respectively disposed on opposite sides of the secondinsulating layer 160. The first insulating layer 150 has a first opening151, and the first opening 151 exposes a part of the transfer pad 120.In some embodiments, the first opening 151 of the first insulating layer150 may be disposed corresponding to the transfer pad 120, but notlimited thereto.

In the embodiment, the pixel electrode 130 is disposed on the firstinsulating layer 150 and is located between the insulating layer 174 andthe first insulating layer 150. The pixel electrode 130 may also bedisposed within the first opening 151, so that the pixel electrode 130may be electrically connected to the transfer pad 120 through the firstopening 151 of the first insulating layer 150. In some embodiments, theorthographic projection of the pixel electrode 130 on the substrate 140overlaps with the orthographic projection of the transfer pad 120 on thesubstrate 140, but not limited thereto.

In the embodiment, the insulating layer 174 is disposed on the pixelelectrode 130 and within the first opening 151. The insulating layer 174covers the pixel electrode 130 and the first insulating layer 150. Thecommon electrode 180 is disposed on the insulating layer 174 and withinthe first opening 151, so that the insulating layer 174 is locatedbetween the common electrode 180 and the pixel electrode 130.

In detail, in the embodiment, in the top view of the display device 100(as shown in FIG. 1A), the transfer pad 120 may include a first part 121corresponding to the first opening 151 and a second part 122corresponding to the second opening 161. The first part 121 of thetransfer pad 120 may be exposed by the first opening 151 of the firstinsulating layer 150, but the second part 122 of the transfer pad 120 isnot exposed by the first opening 151 of the first insulating layer 150.The second part 122 of the transfer pad 120 may also be disposed withinthe second opening 161 of the second insulating layer 160, but the firstpart 121 of the transfer pad 120 is not disposed within the secondopening 161 of the second insulating layer 160. Since the area of theorthographic projection of the transfer pad 120 on the substrate 140 isgreater than the area of the orthographic projection of the drain SD2 onthe substrate 140, and a width W1 of the first part 121 and a width W2of the second part 122 of the transfer pad 120 are both greater than awidth W3 of the drain SD2, the transfer pad 120 has a greater area to bein contact with the pixel electrode 130 than the drain SD2.

In more detail, in the embodiment, in the top view of the display device100 (as shown in FIG. 1A), a width W4 of the first opening 151 may besmaller than the width W1 of the first part 121 of the transfer pad 120,and the width W4 of the first opening 151 may be greater than the widthW3 of the drain SD2. Then, since the transfer pad 120 has a greater areato be in contact with the pixel electrode 130 than the drain SD2, thewidth W4 of the first opening 151 corresponding to the transfer pad 120may also be greater than a width W5 of the second opening 161corresponding to the drain SD2. In other words, the first contact areaof the pixel electrode 130 in contact with the transfer pad 120 throughthe first opening 151 may be greater than the second contact area of thetransfer pad 120 in contact with the drain SD2 through the secondopening 161. The size of the contact area may be used to indicate thelevel of electron transfer, that is, the greater the contact area, thehigher the amount of electron transfer, and the smaller the contactarea, the lower the amount of electron transfer. Therefore, comparedwith a display device without the transfer pad, the display device 100of the embodiment can increase the contact area with the pixel electrode130 by the configuration of the transfer pad 120 to improve the electrontransfer between the pixel electrode 130 and the drain SD2 (that is, thepixel electrode 130 is electrically connected to the drain SD2 throughthe first opening 151, the transfer pad 120, and the second opening 161)to reduce the resistance between the pixel electrode 130 and the drainSD2, and improve the display quality of the display device 100. In theembodiment, the width W1 of the first part 121, the width W2 of thesecond part 122, the width W3 of the drain SD2, the width W4 of thefirst opening 151, and the width W5 of the second opening 161 are, forexample, the maximum widths measured along the extending direction (thatis, the direction X) of the scan line SL.

In addition, in the embodiment, in the top view of the display device100 (as shown in FIG. 1A), the width W1 of the first part 121 of thetransfer pad 120 may be, for example, greater than the width W2 of thesecond part 122 of the transfer pad 120, and the transfer pad 120 mayform a gourd shape contour. In the embodiment, since the width W1 of thefirst part 121 of the transfer pad 120 is greater than the width W2 ofthe second part 122 of the transfer pad 120, and a distance D1 betweenthe second part 122 of the transfer pad 120 and the data line DL may begreater than the distance between the first part 121 of the transfer pad120 and the data line DL, the parasitic capacitance between the transferpad 120 and the data line DL (or the source SD1) may be reduced, thephenomenon of cross-talk between the transfer pad 120 and the data lineDL (or the source SD1) may be reduced, the problem of uneven brightnessof blocks may be avoided.

In addition, in the embodiment, in the top view of the display device100 (as shown in FIG. 1A), the first opening 151 of the first insulatinglayer 150 may not overlap with the second opening 161 of the secondinsulating layer 160. There may be a distance D2 between the firstopening 151 of the first insulating layer 150 and the second opening 161of the second insulating layer 160. In detail, since the first opening151 of the first insulating layer 150 does not overlap with the secondopening 161 of the second insulating layer 160, the insulating layer 174in the first opening 151 may be formed between the pixel electrode 130and the common electrode 180, so as to avoid the risk of short circuitdue to the contact between the pixel electrode 130 and the commonelectrode 180. Conversely, when a first opening of a first insulatinglayer overlaps with a second opening of a second insulating layer (notshown), due to the invert taper of the transfer pad, the insulatinglayer in the first opening may crack, causing the pixel electrode to bein contact with the common electrode and short circuit.

In addition, in the embodiment, in the cross-sectional view of thedisplay device 100 (as shown in FIG. 1C), since the transfer pad 120 maybe disposed on the drain SD2 and may be different stacked layers withthe source SD1 (or the data line DL), the widths W1 and W2 of thetransfer pad 120 may be greater than the width W4 of the first opening151. That is, the orthographic projection of the transfer pad 120 on thesubstrate 140 may partially overlap with the orthographic projection ofthe first insulating layer 150 on the substrate 140. In the embodiment,in the first opening 151, the widths W1 and W2 of the transfer pad 120may be greater than a width W6 of the pixel electrode 130. In this way,a relatively flat topography may be provided, so that the insulatinglayer 174 in the first opening 151 may be formed between the pixelelectrode 130 and the common electrode 180, so as to prevent the risk ofshort circuit due to the contact between the pixel electrode 130 and thecommon electrode 180. Conversely, in a display device without a transferpad (not shown), when the width of the drain is smaller than the widthof the first opening, so that the edge of the drain is exposed in thefirst opening, due to the vertical taper or the invert taper of thedrain (not shown), the insulating layer in the first opening may crack,causing the pixel electrode to be in contact with the common electrodeand short circuit. In the embodiment, the width W6 of the pixelelectrode 130 in the first opening 151 is measured, for example, alongthe extending direction (that is, the direction X) of the scan line SL.

In addition, in the embodiment, in the top view of the display device100 (as shown in FIG. 1A), the transfer pad 120 has a first side 123 anda second side 124 opposite to each other. The first side 123 is adjacentto the first opening 151, and the second side 124 is adjacent to thesecond opening 161. The first side 123 may be regarded as the side ofthe first part 121 of the transfer pad 120 away from the second opening161, and the second side 124 may be regarded as the side of the secondpart 122 of the transfer pad 120 away from the first opening 151. In theembodiment, in the extending direction of the data line DL (that is, thedirection Y), in two adjacent transfer pads 120, the first side 123 ofone transfer pad 120 and the second side 124 of the other transfer pad120 face each other, and the second side 124 of the one transfer pad 120and the first side 123 of the other transfer pad 120 back face eachother.

In short, in the display device 100 according to the embodiment of thedisclosure, the pixel electrode 130 may be electrically connected to thetransfer pad 120 through the first opening 151 of the first insulatinglayer 150, and the transfer pad 120 may be electrically connected to thedrain SD2. Since the width W4 of the first opening 151 is greater thanthe width W3 of the drain SD2, and the width W4 of the first opening 151is smaller than the width W1 of the transfer pad 120, the contact areabetween the pixel electrode 130 and the transfer pad 120 may beincreased. In this way, the display device 100 of the embodiment canimprove the electron transfer between the pixel electrode 130 and thedrain SD2 through the configuration of the transfer pad 120 to reducethe resistance between the pixel electrode 130 and the drain SD2, andimprove the display quality of the display device 100.

Other embodiments will be exemplified below for illustration. It must benoted here that the following embodiments continue to use the referencenumerals and a part of the content of the foregoing embodiment, in whichthe same reference numerals are used to represent the same or similarelements and the descriptions of the same technical content are omitted.For the descriptions of the omitted parts, references may be made to theforegoing embodiment, which will not be reiterated in the followingembodiment.

FIG. 2 is a schematic top view of a display device according to anotherembodiment of the disclosure. For clarity of the drawings and ease ofdescription, FIG. 2 omits depiction of a pixel electrode in the displaydevice. Please refer to FIG. 1A and FIG. 2 at the same time. A displaydevice 100 a of the embodiment is substantially similar to the displaydevice 100 of FIG. 1A. Therefore, the same and similar components in thetwo embodiments are not reiterated here. The display device 100 a of theembodiment is different from the display device 100 mainly in that twoadjacent pixel electrodes (not shown) in the direction Y of the displaydevice 100 a of the embodiment are disposed back-to-back. In addition,in the extending direction (that is, the direction Y) of the data lineDL, in two adjacent transfer pads 120 a and 120 b, a first side 123 a ofthe transfer pad 120 a and a first side 123 b of the transfer pad 120 bface each other, and a second side 124 a of the transfer pad 120 a and asecond side 124 b of the transfer pad 120 b back face each other.

Specifically, in the display device 100 a of the embodiment, in thedirection Y, the transfer pad 120 a and the transfer pad 120 b areadjacent to each other. The transfer pad 120 a has the first side 123 aand the second side 124 a opposite to each other, and the transfer pad120 b has the first side 123 b and the second side 124 b opposite toeach other. The first side 123 a of the transfer pad 120 a is adjacentto a first opening 151 a and the second side 124 a is adjacent to asecond opening 161 a, and the first side 123 b of the transfer pad 120 bis adjacent to a first opening 151 b and the second side 124 b isadjacent to a second opening 161 b. The first side 123 a of the transferpad 120 a may be regarded as the side of the first part 121 a of thetransfer pad 120 a away from the second opening 161 a, and the secondside 124 a of the transfer pad 120 a may be regarded as the side of thesecond part 122 a of the transfer pad 120 a away from the first opening151 a. The first side 123 b of the transfer pad 120 b may be regarded asthe side of the first part 121 b of the transfer pad 120 b away from thesecond opening 161 b, and the second side 124 b of the transfer pad 120b may be regarded as the side of the second part 122 b of the transferpad 120 b away from the first opening 151 b. In addition, openings GIcand 173 c are further included between the adjacent transfer pad 120 aand transfer pad 120 b, so that the source (not shown) and the drain SD2may be electrically connected to the semiconductor layer SE,respectively.

In the embodiment, in order to avoid light leakage due to the topographyproblem of the first openings 151 a and 151 b, a black matrix layer 190of the display device 100 a not only shields the scan line SL, but alsoshields the first openings 151 a and 151 b, and the edges of the firstopenings 151 a and 151 b extending outward in a range of about 3microns.

In addition, in order to increase the aperture ratio, the display device100 a of the embodiment further provides the first openings 151 a and151 b in the central region of the black matrix layer 190, and providesthe second openings 161 a and 161 b in the periphery region of the blackmatrix layer 190. Specifically, by enabling the first opening 151 a ofthe transfer pad 120 a and the first opening 151 b of the transfer pad120 b to face each other, and the second opening 161 a of the transferpad 120 a and the second opening 161 b of the transfer pad 120 b to backface each other, the first openings 151 a and 151 b may be disposed inthe central region of the black matrix layer 190. That is, the firstopening 151 a of the transfer pad 120 a may be adjacent to the firstopening 151 b of the transfer pad 120 b, the first opening 151 a of thetransfer pad 120 a may be away from the second opening 161 b of thetransfer pad 120 b, and the first opening 151 b of the transfer pad 120b may be away from the second opening 161 a of the transfer pad 120 a.Conversely, if the first openings are disposed in the peripheral regionof the black matrix layer and the second openings are disposed in thecentral region (not shown) of the black matrix layer, in order to ensureshielding of the edges of the first openings extending outward in therange of about 3 microns, it is necessary to additionally increase theshielding range of the black matrix layer, as a result, the apertureratio is decreased.

In summary, in the display device according to the embodiments of thedisclosure, the pixel electrode may be electrically connected to thetransfer pad through the first opening of the first insulating layer,and the transfer pad may be electrically connected to the drain. Sincethe width of the first opening is greater than the width of the drain,and the width of the first opening is smaller than the width of thetransfer pad, the contact area between the pixel electrode and thetransfer pad may be increased. In this way, the display device of theembodiments can improve the electron transfer between the pixelelectrode and the drain by the configuration of the transfer pad toreduce the resistance between the pixel electrode and the drain, andimprove the display quality of the display device. For example, in ahigh-pixel display panel with a small pixel size (such as a virtualreality (VR) display panel, but not limited thereto), since the width ofthe drain thereof is smaller than the width of the drain of a high-pixeldisplay panel with a large pixel size, the contact area between thepixel electrode and the drain may be too small for stable electrontransfer. Therefore, if a transfer pad can be disposed in the high-pixeldisplay panel with the small pixel size according to the teachings ofthe embodiments, through the electrical connection design of thetransfer pad, the resistance between the pixel electrode and the draincan be reduced to meet the requirements of small pixel size and highresolution at the same time.

Finally, it should be noted that the above embodiments are only used toillustrate the technical solutions of the disclosure, but not to limitthe same. Although the disclosure has been described in detail withreference to the foregoing embodiments, persons skilled in the artshould understand that the technical solutions described in theforegoing embodiments may still be modified, or some or all of thetechnical features may be equivalently replaced. However, themodifications or replacements do not cause the essence of thecorresponding technical solution to deviate from the scope of thetechnical solutions according to the embodiments of the disclosure.

What is claimed is:
 1. A display device, comprising: a thin filmtransistor, comprising a drain; a transfer pad, electrically connectedto the drain through a second opening of a second insulating layer,wherein the second insulating layer is disposed between the transfer padand the drain; and a pixel electrode, electrically connected to thetransfer pad through a first opening of a first insulating layer,wherein the first insulating layer is disposed between the transfer padand the pixel electrode, wherein a width of the first opening is greaterthan a width of the drain, and the width of the first opening is smallerthan a width of the transfer pad, wherein in a top view of the displaydevice, a first contact area of the pixel electrode in contact with thetransfer pad through the first opening is greater than a second contactarea of the transfer pad in contact with the drain through the secondopening.
 2. The display device according to claim 1, wherein thetransfer pad is made of a metal material.
 3. The display deviceaccording to claim 1, wherein the first opening does not overlap withthe second opening.
 4. The display device according to claim 1, whereinthe thin film transistor is electrically connected to a data line, thetransfer pad comprises a first part corresponding to the first openingand a second part corresponding to the second opening, and a distancebetween the second part and the data line is greater than a distancebetween the first part and the data line.
 5. The display deviceaccording to claim 4, wherein a width of the first part is greater thana width of the second part.
 6. The display device according to claim 4,wherein a width of the first part is greater than the width of thedrain, and a width of the second part is greater than the width of thedrain.
 7. The display device according to claim 1, wherein the width ofthe first opening is greater than a width of the second opening.
 8. Thedisplay device according to claim 1, wherein there is a distance betweenthe first opening and the second opening.
 9. The display deviceaccording to claim 1, wherein the first insulating layer and the thinfilm transistor are respectively disposed on opposite sides of thesecond insulating layer.
 10. The display device according to claim 1,wherein an area of the transfer pad is greater than an area of thedrain.
 11. The display device according to claim 1, wherein, in thefirst opening, a width of the transfer pad is greater than a width ofthe pixel electrode.
 12. The display device according to claim 1,wherein, in an extending direction of a data line, in two adjacenttransfer pads, a first side of one of the transfer pads and a first sideof another one of the transfer pads face each other, and a second sideof the one of the transfer pads and a second side of the another one ofthe transfer pads back face each other.
 13. The display device accordingto claim 12, wherein a first opening of the one of the transfer pads anda first opening of the another one of the transfer pads face each other,and a second opening of the one of the transfer pads and a secondopening of the another one of the transfer pads back face each other.14. The display device according to claim 12, wherein a first opening ofthe one of the transfer pads is adjacent to a first opening of theanother one of the transfer pads, the first opening of the one of thetransfer pads is away from a second opening of the another one of thetransfer pads, and the first opening of the another one of the transferpads is away from a second opening of the one of the transfer pads. 15.The display device according to claim 1, wherein an orthographicprojection of the transfer pad on a substrate overlaps with anorthographic projection of the drain on the substrate.
 16. The displaydevice according to claim 1, wherein an orthographic projection of thetransfer pad on a substrate is greater than an orthographic projectionof the drain on the substrate.
 17. The display device according to claim1, wherein the transfer pad is disposed between the pixel electrode andthe drain.
 18. The display device according to claim 1, wherein anorthographic projection of the pixel electrode on a substrate overlapswith an orthographic projection of the transfer pad on the substrate.